MB82D01171A Datasheet, PDF (23/27 Pages) Fujitsu Component Limited. – 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory

MB82D01171A-80/80L/80LL/85/85L/85LL/90/90L/90LL
s DATA RETENTION
1. Low VDD Characteristics
Parameter
Symbol
Test Conditions
VDD Data Retention Supply
Voltage
VDD Data Retention
Supply Current
L Version
LL Version
L Version
LL Version
VDR
CE1 = CE2 ≥ VDD − 0.2 V or,
CE1 = CE2 = VIH,
VDD = VDD (23) ,
IDR
VIN = VIH (23) or VIL
CE1 = CE2 = VIH (23) , IOUT = 0 mA
VDD = VDD (23) ,
IDR1 VIN ≤ 0.2 V or VIN ≥ VDD − 0.2 V,
CE1 = CE2 ≥ VDD − 0.2 V, IOUT = 0 mA
Value
Min Max
2.1 3.5

5

1.5

1
 200
 100

70
Unit
V
mA
µA
Data Retention Setup Time
tDRS VDD = VDD (27) at data retention entry
0

ns
Data Retention Recovery Time
tDRR VDD = VDD (27) after data retention
90

ns
VDD Voltage Transition Time
∆V/∆t

0.5
 V/µs
2. Data Retention Timing
3.5 V
VDD
2.7 V
tDRS
∆V/∆t
∆V/∆t
tDRR
CE2
2.1 V
CE1
CE1 = CE2 ≥ VDD - 0.2 V or
VIH (23) Min
0.4 V
VSS
Data Retention Mode
Data bus must be in High-Z at data retention entry.
23