MB82D01171A Datasheet, PDF (21/27 Pages) Fujitsu Component Limited. – 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory

MB82D01171A-80/80L/80LL/85/85L/85LL/90/90L/90LL
12. POWER DOWN Timing
CE1
CE2
DQ
tCSP
Power Down Entry
tCHS
tC2LP
High-Z
Power Down Mode
13. Standby Entry Timing after Read or Write
CE1
OE
tCHOX
tCHH
Power Down Exit
tCHWX
WE
Active (Read)
Standby
Active (Write)
Standby
Note : Both tCHOX and tCHWX define the earliest entry timing for Standby mode. If either of timing is not satisfied,
it takes tRC (Min) period from either last address transition of A0 and A1, or CE1 Low to High transition.
14. POWER-UP Timing 1
CE1
CE2
tC2LH
tCHS
tCHH
VDD
VDD Min
0V
Note : It is recommended to keep CE2 at Low during VDD power-up.
The tC2LH specifies after VDD reaches specified minimum level.
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