MB82D01171A Datasheet, PDF (11/27 Pages) Fujitsu Component Limited. – 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory

MB82D01171A-80/80L/80LL/85/85L/85LL/90/90L/90LL
(3) Power Down Parameters
Parameter
CE2 Low Setup Time for Power Down Entry
CE2 Low Hold Time after Power Down Entry
CE1 High Hold Time following CE2 High
after Power Down Exit
CE1 High Setup Time following CE2 High
after Power Down Exit
Symbol
tCSP
tC2LP
tCHH
tCHS
Value
Min
Max
10

100

350

10

Unit
Note
ns
ns
µs
ns
(4) Other Timing Parameters
Parameter
Symbol
Value
Min
Max
Unit
Note
CE1 High to OE Invalid Time for Standby Entry
tCHOX
20

ns
CE1 High to WE Invalid Time for Standby Entry
tCHWX
20

ns
*1
CE2 Low Hold Time after Power-up
tC2LH
50

µs
*2
CE2 High Hold Time after Power-up
tC2HL
50

µs
*3
CE1 High Hold Time following CE2 High after
Power-up
tCHH
350

µs
*2
Input Transition Time
tT
1
25
ns
*4
*1: It may write some data into any address location if tCHWX is not satisfied.
*2: Must satisfy tCHH (Min) after tC2LH (Min) .
*3: Requires Power Down mode entry and exit after tC2HL.
*4: The Input Transition Time (tT) at AC testing is 5 ns as shown in below. If actual tT is longer than 5 ns,
it may violate some timing parameters of AC specification.
(5) AC Test Conditions
Parameter
Input High Level
Input Low Level
Input Timing Measurement Level
Input Transition Time
Symbol
Conditions
VDD = 3.1 V to 3.5 V
VIH VDD = 2.7 V to 3.1 V
VDD = 2.3 V to 2.7 V
VDD = 3.1 V to 3.5 V
VIL VDD = 2.7 V to 3.1 V
VDD = 2.3 V to 2.7 V
VDD = 3.1 V to 3.5 V
VREF VDD = 2.7 V to 3.1 V
VDD = 2.3 V to 2.7 V
tT
Between VIL and VIH
Measured Value Unit
2.6
V
2.3
V
2.0
V
0.5
V
0.5
V
0.4
V
1.5
V
1.3
V
1.1
V
5
ns
Note
11