MB85RC16 Datasheet, PDF (1/20 Pages) Fujitsu Component Limited. – Memory FRAM 16 K (2 K x 8) Bit I2C

FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
DS501-00001-2v0-E
16 K (2 K × 8) Bit I²C
MB85RC16
■ DESCRIPTION
The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words ×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery.
The memory cells used in the MB85RC16 have at least 10¹⁰ Read/Write operation endurance per bit, which
is a significant improvement over the number of read and write operations supported by other nonvolatile
memory products.
The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike
Flash memory and E²PROM. Therefore, the writing completion waiting sequence like a write busy state is
not required.
■ FEATURES
• Bit configuration
: 2,048 words × 8 bits
• Operating power supply voltage : 2.7 V to 3.6 V
• Operating frequency
: 1 MHz (Max)
• Two-wire serial interface
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating temperature range : − 40 °C to + 85 °C
• Data retention
: 10 years ( + 75 °C)
• Read/Write endurance
: 10¹⁰ times
• Package
: Plastic / SOP, 8-pin (FPT-8P-M02)
• Low power consumption
: Operating current 0.1mA (Max: @1 MHz), Standby current 0.1 μA (Typ)
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2011.6