MB85RC04VPNF-G Datasheet, PDF (1/36 Pages) Fujitsu Component Limited. – 4 K (512 × 8) Bit I2C

FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
4 K (512 × 8) Bit I²C
MB85RC04V
DS501-00016-2v0-E
■ DESCRIPTION
The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
Unlike SRAM, the MB85RC04V is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC04V has improved to be at
least 10¹² cycles, significantly outperforming other nonvolatile memory products in the number.
The MB85RC04V does not need a polling sequence after writing to the memory such as the case of Flash
memory or E²PROM.
■ FEATURES
• Bit configuration
: 512 words × 8 bits
• Two-wire serial interface
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency
: 1 MHz (Max)
• Read/write endurance
: 10¹² times / byte
• Data retention
: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 3.0 V to 5.5 V
• Low-power consumption
: Operating power supply current 90 μA (Typ @1 MHz)
Standby current 5 μA (Typ)
• Operation ambient temperature range
: − 40 °C to + 85 °C
• Package
: 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant
Copyright©2012-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.2