1MBI1200U4C-170 Datasheet, PDF (4/6 Pages) Fuji Electric – IGBT MODULE

1MBI1200U4C-170
Forward current vs. Forward on voltage (typ.)
chip
2800
2400
Tj=25°C Tj=125°C
2000
1600
1200
800
400
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward on voltage : VF [ V ]
0.1000
Transient thermal resistance (max.)
FWD
0.0100
IGBT
0.0010
0.0001
0.001
0.010
0.100
Pulse width : Pw [ sec ]
1.000
IGBT Modules
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rgon=3.9Ω, Tj=125°C
1600
1.6
1400
1200
Irr
1.4
1.2
1000
1.0
800
0.8
600
0.6
400
trr
0.4
200
0.2
0
0.0
0
400 800 1200 1600 2000
Forward current : IF [ A ]
4