1MBI1200U4C-170 Datasheet, PDF (1/6 Pages) Fuji Electric – IGBT MODULE

1MBI1200U4C-170
IGBT Modules
IGBT MODULE (U series)
1700V / 1200A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
AC : 1min.
Mounting (*2)
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1700
±20
1600
1200
3200
2400
1200
2400
7350
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
A
W
°C
°C
VAC
N·m
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Symbols
Conditions
ICES
VGE = 0V, VCE = 1700V
IGES
VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 1200mA
VCE (sat)
(main terminal) _{VGE = 15V}
VCE (sat)
IC = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Cies
VGE = 0V, VCE = 10V, f = 1MHz
ton
tr
toff
VCC = 900V, IC = 1200A
VGE = ±15V, Tj = 125°C
Rgon = 3.9Ω, Rgoff = 1.5Ω
tf
VF
(main terminal) _{VGE = 0V}
Tj=25°C
Tj=125°C
VF
(chip)
IF = 1200A
Tj=25°C
Tj=125°C
trr
IF = 1200A
R lead
Characteristics
min. typ. max.
-
-
1.0
-
-
2400
5.5
6.5
7.5
-
2.43 2.61
-
2.83
-
-
2.25 2.40
-
2.65
-
-
112
-
-
1.80
-
-
0.85
-
-
1.30
-
-
0.35
-
-
1.98 2.36
-
2.18
-
-
1.80 2.15
-
2.00
-
-
0.35
-
-
0.146
-
Units
mA
nA
V
V
nF
µs
V
µs
mΩ
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min. typ. max.
-
-
0.017
-
-
0.030
-
0.006
-
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
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