1MBI1200U4C-170 Datasheet, PDF (3/6 Pages) Fuji Electric – IGBT MODULE

1MBI1200U4C-170
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=3.9Ω, Rgoff=1.5Ω, Tj= 125°C
2.4
2.2
ton
2.0
1.8
1.6
1.4
1.2
toff
tr
1.0
0.8
0.6
0.4
tf
0.2
0.0
0
400
800
1200
1600
2000
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=3.9Ω, Rgoff=1.5Ω, Tj= 125°C
800
700
Eoff
600
Eon
500
Err
400
300
200
100
0
0
400
800
1200
1600
2000
Collector current : Ic [ A ] , Forward current : IF [ A ]
2800
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
2400
2000
1600
1200
800
400
0
0
400
800
1200
1600
2000
Collector - Emitter voltage : VCE [ V ]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A,VGE=±15V, Tj= 125°C
6.0
ton
5.0
4.0
toff
3.0
tr
2.0
1.0
tf
0.0
0 2 4 6 8 10 12 14 16 18
Gate resistance : Rg [ Ω ]
1400
1200
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A,VGE=±15V, Tj= 125°C
Eon
1000
800
Eoff
600
400
Err
200
0
0 2 4 6 8 10 12 14 16 18
Gate resistance : Rg [ Ω ]
3