1MBI1200U4C-170 Datasheet, PDF (2/6 Pages) Fuji Electric – IGBT MODULE

1MBI1200U4C-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
2800
Tj=25°C ,chip
2400
VGE=20V 15V 12V
2000
1600
10V
1200
800
400
0
0.0
8V
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
2800
2400
Tj=25°C Tj=125°C
2000
1600
1200
800
400
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
10
Cres
Coes
1
0
10
20
30
Collector-Emitter voltage : VCE [V]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
2800
Tj= 125°C, chip
2400
VGE=20V15V
12V
2000
1600
10V
1200
800
400
8V
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
10
8
6
4
Ic=2400A
2
Ic=1200A
Ic=600A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
1000
800
600
400
200
0
0
Dynamic Gate charge (typ.)
Tj= 25°C
25
VCE
VGE
20
15
10
5
1000 2000 3000 4000
Gate charge : Qg [ nC ]
0
5000
2