MRF8P20165WHR3 Datasheet, PDF (9/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement--Mode Lateral MOSFETs

W--CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
0.001 ^{Channel Bandwidth @ ±5 MHz Offset.}
Input Signal PAR = 9.8 dB @ 0.01%
0.0001 ^{Probability on CCDF}
0
2
4
6
8
10
12
PEAK--TO--AVERAGE (dB)
Figure 12. CCDF W--CDMA IQ Magnitude
Clipping, 2--Carrier Test Signal
100
10
1
Input Signal
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
0.001 ^{Channel Bandwidth @ ±5 MHz Offset.}
Input Signal PAR = 9.9 dB @ 0.01%
0.0001 ^{Probability on CCDF}
0
2
4
6
8
10
12
PEAK--TO--AVERAGE (dB)
Figure 14. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
--20
3.84 MHz
--30
Channel BW
--40
--50
--60
--70
--80
--90
--ACPR in +ACPR in
--100 _{--IM3 in}
3.84 MHz BW 3.84 MHz BW
--110 ^{3.84 MHz BW}
--120
--75 --60 --45 --30 --15 0 15 30
f, FREQUENCY (MHz)
+IM3 in
3.84 MHz BW
45 60 75
Figure 13. 2-Carrier W-CDMA Spectrum
10
0
--10
3.84 MHz
--20
Channel BW
--30
--40
--50
--60 --ACPR in 3.84 MHz
Integrated BW
--70
+ACPR in 3.84 MHz
Integrated BW
--80
--90
--100
--9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 15. Single--Carrier W--CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
9