MRF8P20165WHR3 Datasheet, PDF (8/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
17.5
1
V_DD = 28 Vdc, I_DQA = 550 mA, V_GSB = 1.3 Vdc
f = 1960 MHz, Single--Carrier W--CDMA
17
0 _{3.84 MHz Channel Bandwidth}
η_D
60
--10
50
--15
16.5
--1
40
--20
16
--2
--1 dB = 17 W
15.5
--3
--2 dB = 28 W
G_ps
ACPR ³⁰
--25
20
--30
15
--4
--3 dB = 39 W
PARC
10
--35
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
14.5
--5
0
--40
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS)
Figure 8. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
18
60
0
V_DD = 28 Vdc, I_DQA = 550 mA, V_GSB = 1.3 Vdc
17
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
1930 MHz ⁵⁰
--10
1960 MHz
16
G_ps
η_D
1930 MHz
15 _{1960 MHz}
1995 MHz
40
--20
ACPR
30
--30
1995 MHz
1930 MHz
14
1995 MHz ^{1960 MHz}
20
--40
13
Input Signal PAR = 9.9 dB
10
--50
@ 0.01% Probability on CCDF
12
0
--60
1
10
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
--10
V_DD = 28 Vdc, I_DQA = 550 mA, V_GSB = 1.3 Vdc, f1 = 1945 MHz
f2 = 1975 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel
17 _Bandwidth
--20
16 ^Gps
--30
IM5--L
15
IM5--U
--40
IM3--U
14
IM3--L
--50
13
IM7--L
12
1
IM7--U
Input Signal PAR = 9.8 dB @
0.01% Probability on CCDF
10
100
--60
--70
200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. 2--Carrier W--CDMA Power Gain, IM3, IM5, IM7
versus Output Power
18
15
12
9
V_DD = 28 Vdc
6
P_in = 0 dBm
I_DQA = 550 mA
V_GSB = 1.3 Vdc
3
0
1800 1835 1870 1905 1940 1975 2010 2045 2080
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
MRF8P20165WHR3 MRF8P20165WHSR3
8
RF Device Data
Freescale Semiconductor