MRF8P20165WHR3 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: MRF8P20165WH
Rev. 0, 4/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 1880 to 2025 MHz.
• Typical Doherty Single--Carrier W--CDMA Performance: V_DD = 28 Volts,
I_DQA = 550 mA, V_GSB = 1.3 Vdc, P_out = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
1930 MHz
16.1
47.0
7.1
--27.7
MRF8P20165WHR3
MRF8P20165WHSR3
1930--1995 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
1960 MHz
16.3
47.7
7.1
--29.7
1995 MHz
16.3
46.0
7.0
--33.3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW
Output Power (2 dB Input Overdrive from Rated P_out)
• Typical P_out @ 3 dB Compression Point ≃ 190 Watts ⁽¹⁾
Features
• Designed for Wide Instantaneous Bandwidth Applications. VBW_res ≃ 100 MHz.
• Designed for Wideband Applications that Require 65 MHz Signal Bandwidth
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
Table 1. Maximum Ratings
CASE 465M--01, STYLE 1
NI--780--4
MRF8P20165WHR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20165WHSR3
RF_inA/V_GSA 3
1 RF_outA/V_DSA
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ⁽²⁾
Symbol
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
RF_inB/V_GSB 4
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 37 W CW, 28 Vdc, I_DQA = 550 mA, V_GSB = 1.3 Vdc, 1960 MHz
Case Temperature 114°C, 160 W CW, 28 Vdc, I_DQA = 550 mA, V_GSB = 1.3 Vdc, 1960 MHz
Symbol
R_θJC
Value ⁽³⁾
0.79
0.53
Unit
°C/W
1. P3dB = P_avg + 7.0 dB where P_avg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
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