MRF7S38075HR3 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 25 Ω
Z_source
f = 3600 MHz
f = 3400 MHz
f = 3600 MHz
Z_load
f = 3400 MHz
V_DD = 30 Vdc, I_DQ = 900 mA, P_out = 12 W Avg.
f
MHz
Z_source
W
Z_load
W
3400
20.70 + j14.63
5.63 - j5.17
3425
20.22 + j12.38
5.44 - j5.10
3450
19.02 + j10.82
5.23 - j4.97
3475
17.58 + j9.95
4.98 - j4.83
3500
16.28 + j9.46
4.73 - j4.66
3525
14.97 + j9.47
4.50 - j4.50
3550
13.94 + j9.49
4.22 - j4.33
3575
13.11 + j9.66
3.97 - j4.13
3600
12.45 + j9.98
3.73 - j3.89
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S38075HR3 MRF7S38075HSR3
9