MRF7S38075HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
− 10
V_DD = 30 Vdc, I_DQ =900 mA
f1 = 3495 MHz, f2 = 3505 MHz
−20 _{Two −Tone Measurements, 10 MHz Tone Spacing}
− 30
3rd Order
− 40
− 50
5th Order
− 60
7th Order
− 70
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 30 Vdc, P_out = 84 W (PEP), I_DQ = 900 mA
−10 ^{Two −Tone Measurements}
(f1 + f2)/2 = Center Frequency of 3500 MHz
− 20
IM3 −L
− 30
IM3 −U
− 40
IM5 −U
−50 ^{IM7 −U}
IM5 −L
IM7 −L
− 60
1
10
100
TWO −TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
35
V_DD = 30 Vdc, I_DQ = 900 mA
30 ^{f = 3500 MHz, 802.16d, 64 QAM 3/4}
4 Bursts, 7 MHz Channel
25 ^{Bandwidth, Input Signal PAR = 9.5 dB}
@ 0.01% Probability on CCDF
20
15 ^Gps
− 25
η_D
− 30
− 35
ACPR
− 40
− 45
10
− 50
5
− 55
0
− 60
1
10
100
P_out, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
17
16
15
G_ps
14
T_C = −30_C
25_C
45
− 30_C
40
25_C
85_C ³⁵
30
13
85_C
25
12
20
11
15
10
9
η_D
8
1
V_DD = 30 Vdc
10
I_DQ = 900 mA
5
f = 3500 MHz
0
10
100 200
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
14
13
12
32 V
11
10
I_DQ = 900 mA
f = 3500 MHz
9
0
40
30 V
V_DD = 28 V
80
120
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
7