MRF7S38075HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
15.5
16
15 ^ηD
14
V_DD = 30 Vdc, P_out = 12 W (Avg.), I_DQ = 900 mA, 802.16d
14.5
64 QAM ³/_4, 4 Bursts, 7 MHz Channel Bandwidth, Input ¹²
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
14
10
G_ps
13.5
− 47
−8
IRL
13
− 49
− 12
12.5
ACPR − U
− 51
− 16
12
ACPR −L
− 53
− 20
11.5
− 55
− 24
3400 3425 3450 3475 3500 3525 3550 3575 3600
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ P_out = 12 Watts Avg.
15
24
14.5
η_D
22
14
20
13.5 _{VDD = 30 Vdc, Pout = 23 W (Avg.), IDQ = 900 mA, 802.16d} ^Gps
18
13
64 QAM ³/_4, 4 Bursts, 7 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
− 38
−8
12.5
− 40
− 12
IRL
12
ACPR −L
− 42
− 16
11.5
− 44
− 20
ACPR − U
11
− 46
− 24
3400 3425 3450 3475 3500 3525 3550 3575 3600
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ P_out = 23 Watts Avg.
16
I_DQ = 1350 mA
15
1125 mA
14
900 mA
13
675 mA
12
450 mA
11
V_DD = 30 Vdc, I_DQ = 900 mA
10
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
9
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
V_DD = 30 Vdc, I_DQ = 900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
− 20
I_DQ = 450 mA
− 30
675 mA
− 40
900 mA
1350 mA
1125 mA
− 50
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S38075HR3 MRF7S38075HSR3
6
RF Device Data
Freescale Semiconductor