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MRF7S38075HR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
109
108
107
106
105
90
110 130 150 170
190 210 230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 30 Vdc, Pout = 12 W Avg., and ηD = 14%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcuâ
lators by product.
Figure 12. MTTF versus Junction Temperature
WiMAX TEST SIGNAL
100
10
1
Compressed Output
Signal @ 12 W Avg. Pout
0.1
Input Signal
0.01
0.001
0.0001
802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz
Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
0
2
4
6
8
10
PEAK âTOâAVERAGE (dB)
Figure 13. OFDM 802.16d Test Signal
â 10
7 MHz
â 20
Channel BW
System Type G
â 30
â 40
â 50
â 60
â 70
â 80
Point B
Point C
â 90
Point B
Point C
â100 Point D
Point D
â 110
â9 â7.2 â5.4 â3.6 â1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 14. WiMAX Spectrum Mask Specifications
MRF7S38075HR3 MRF7S38075HSR3
8
RF Device Data
Freescale Semiconductor
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