MRF7S38010H Datasheet, PDF (9/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 50 Ω
f = 3400 MHz
f = 3600 MHz
Z_load
Z_source
f = 3400 MHz
f = 3600 MHz
V_DD = 30 Vdc, I_DQ = 160 mA, P_out = 2 W Avg.
f
MHz
Z_source
W
Z_load
W
3400
31.79 - j0.13
13.92 - j11.33
3425
32.46 - j3.62
14.61 - j11.40
3450
32.58 - j6.82
15.53 - j11.36
3475
32.29 - j9.43
16.44 - j11.28
3500
31.32 - j11.63
17.25 - j11.07
3525
30.03 - j13.46
18.11 - j10.64
3550
28.76 - j15.19
18.96 - j10.22
3575
27.24 - j16.25
19.60 - j9.68
3600
25.51 - j17.02
20.17 - j8.99
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF7S38010HR3 MRF7S38010HSR3
9