MRF7S38010H Datasheet, PDF (3/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) V_DD = 30 Vdc, I_DQ = 160 mA, P_out = 2 W Avg.,
f = 3400 MHz and f = 3600 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM ³/₄, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ P_out = 2 W Avg.
Mask
dBc
Point B at 3.5 MHz Offset
—
- 26
—
Point C at 5 MHz Offset
—
- 38
—
Point D at 7.4 MHz Offset
—
- 43
—
Point E at 14 MHz Offset
—
- 60
—
Point F at 17.5 MHz Offset
—
- 60
—
Relative Constellation Error @ P_out = 2 W Avg. ⁽¹⁾
RCE
—
- 33
—
dB
Error Vector Magnitude ⁽¹⁾
EVM
—
2.3
—
% rms
(Typical EVM Performance @ P_out = 2 W Avg. with OFDM 802.16d
Signal Call)
Typical Performances (In Freescale Test Fixture, 50 ohm system) V_DD = 30 Vdc, I_DQ = 160 mA, 3400 - 3600 MHz Bandwidth
Video Bandwidth @ 12 W PEP P_out where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
VBW
—
20
—
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
MHz
Gain Flatness in 200 MHz Bandwidth @ P_out = 2 W Avg.
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ P_out = 10 W CW
Average Group Delay @ P_out = 10 W CW, f = 3500 MHz
Part - to - Part Insertion Phase Variation @ P_out = 10 W CW,
f = 3500 MHz, Six Sigma Window
G_F
—
1.04
—
dB
Φ
—
2.22
—
°
Delay
—
1.88
—
ns
ΔΦ
—
25.9
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.025
—
dB/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB
—
0.246
—
dBm/°C
1. RLE = 20Log(EVM/100)
RF Device Data
Freescale Semiconductor
MRF7S38010HR3 MRF7S38010HSR3
3