MRF7S38010H Datasheet, PDF (2/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 33.5 μAdc)
Gate Quiescent Voltage
(V_DD = 30 Vdc, I_D = 160 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 335 mAdc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 28 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
V_GS(th)
1.2
2
2.7
Vdc
V_GS(Q)
2
2.7
3.5
Vdc
V_DS(on)
0.1
0.21
0.3
Vdc
C_rss
—
0.13
—
pF
C_oss
—
68.5
—
pF
C_iss
—
50.6
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 30 Vdc, I_DQ = 160 mA, P_out = 2 W Avg., f = 3400 MHz and f = 3600 MHz,
WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM ³/₄, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in
0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain
G_ps
13
15
17
dB
Drain Efficiency
η_D
15
17
30
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
8
8.5
—
dB
Adjacent Channel Power Ratio
ACPR
—
- 49
- 46
dBc
Input Return Loss
IRL
—
- 12
-6
dB
1. Part internally matched both on input and output.
(continued)
MRF7S38010HR3 MRF7S38010HSR3
2
RF Device Data
Freescale Semiconductor