MRF7S38010H Datasheet, PDF (7/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
− 10
V_DD = 30 Vdc, I_DQ = 160 mA
f1 = 3495 MHz, f2 = 3505 MHz
−20 _{Two −Tone Measurements, 10 MHz Tone Spacing}
− 30
3rd Order
− 40
7th Order
− 50
− 60
5th Order
− 70
1
10
50
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
− 10
V_DD = 30 Vdc, P_out = 12 W (PEP), I_DQ = 160 mA
−20 ^{Two −Tone Measurements}
(f1 + f2)/2 = Center Frequency of 3500 MHz
− 30
−40 _{IM5 −U}
IM5 −L
− 50
− 60
IM3 −U IM3 −L
IM7 −U
IM7 −L
− 70
1
10
100
TWO −TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
45
V_DD = 30 Vdc, I_DQ = 160 mA
40 f = 3500 MHz, 802.16d, 64 QAM ³/₄
4 Bursts, 7 MHz Channel
35 _{Bandwidth, Input Signal PAR = 9.5 dB}
30 ^{@ 0.01% Probability on CCDF}
25
η_D
20
G_ps
15
10
ACPR
5
− 30_C
85_C
− 15
− 20
25_C
− 25
85_C
− 30
−30_C _−35
T_C = −30_C
− 40
− 45
25_C
85_C
− 50
− 55
0
− 60
1
10
20
P_out, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
19
18
G_ps
17
T_C = −30_C
25_C
− 30_C
50
25_C ₄₅
85_C
40
16
35
85_C
15
30
14
25
13
η_D
12
11
1
20
V_DD = 30 Vdc
I_DQ = 160 mA
15
f = 3500 MHz
0
10
30
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
17
I_DQ = 160 mA
16
f = 3500 MHz
15
14
13
32 V
12
30 V
V_DD = 28 V
11
0
5
10
15
20
25
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF7S38010HR3 MRF7S38010HSR3
7