MRF7S19210HR3 Datasheet, PDF (9/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 5 Ω
f = 2040 MHz
Z_load
f = 2040 MHz
Z_source
f = 1880 MHz
f = 1880 MHz
V_DD = 28 Vdc, I_DQ = 1400 mA, P_out = 63 W Avg.
f
MHz
Z_source
W
Z_load
W
1880
5.20 - j1.02
1.49 - j1.45
1900
4.90 - j1.00
1.52 - j1.30
1920
4.60 - j0.92
1.55 - j1.16
1940
4.31 - j0.82
1.58 - j1.04
1960
4.04 - j0.71
1.61 - j0.93
1980
3.80 - j0.56
1.66 - j0.82
2000
3.58 - j0.42
1.73 - j0.70
2020
3.38 - j0.30
1.81 - j0.57
2040
3.19 - j0.16
1.88 - j0.49
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 12. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF7S19210HR3 MRF7S19210HSR3
9