MRF7S19210HR3 Datasheet, PDF (7/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
24
60
−5
V_DD = 28 Vdc, I_DQ = 1400 mA, f = 1960 MHz
−30_C
Single−Carrier W−CDMA, 3.84 MHz
22 _{Channel Bandwidth}
25_C
50
−10
T_C = −30_C
20 _Gps
25_C
85_C
85_C ₄₀
−15
18
Input Signal PAR = 7.5 dB @ 0.01%
30
−20
Probability on CCDF
16
20
−25
ACPR
14
85_C
25_C
10
−30
12
η_D
−30_C
0
−35
1
10
100
300
P_out, OUTPUT POWER (WATTS) AVG.
Figure 7. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
0
Gain
15
−2
10
−4
5
−6
V_DD = 28 Vdc
0
P_out = 9 dBm
IRL
−8
I_DQ = 1400 mA
−5
−10
1550 1650 1750 1850 1950 2050 2150 2250 2350
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
10⁹
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 63 W Avg., and η_D = 29%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 9. MTTF versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF7S19210HR3 MRF7S19210HSR3
7