MRF7S19210HR3 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
21
20.5
G_ps
34
η_D
33
20
V_DD = 28 Vdc, P_out = 63 W (Avg.)
32
19.5
I_DQ = 1400 mA
31
19 ^{Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth}
30
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
18.5
−31
−2
−1.5
18
−32
−4
−2
PARC
17.5
−33
−6
−2.5
17
16.5
IRL
ACPR
−34
−8
−3
−35
−10
−3.5
16
−36
−12
−4
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 63 Watts Avg.
22
I_DQ = 2100 mA
21
20 ^{1750 mA}
19
1400 mA
18
1050 mA
17
700 mA
16
1
10
V_DD = 28 Vdc
f = 1960 MHz
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain versus Output Power
0
V_DD = 28 Vdc, P_out = 160 W (PEP), I_DQ = 1400 mA
−10 ^{Two−Tone Measurements}
(f1 + f2)/2 = Center Frequency of 1960 MHz
−20
IM3−U
−30
IM3−L
−40
IM5−U
IM5−L
−50
IM7−L
IM7−U
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two - Tone Spacing
20.5
1
G_ps
20
0
PARC
ACPR
19.5
−1
45
−25
40
−30
35
−35
19
−2 −1 dB = 48.916 W
−3 dB = 90.739 W ³⁰
−40
18.5
−3 _ηD
−2 dB = 68.142 W
25
−45
18
−4
V_DD = 28 Vdc, I_DQ = 1400 mA, f = 1960 MHz
20
−50
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
17.5
−5
15
−55
30
40
50
60
70
80
90 100
P_out, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MRF7S19210HR3 MRF7S19210HSR3
6
RF Device Data
Freescale Semiconductor