MRF7S19210HR3 Datasheet, PDF (10/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
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P3dB = 55.27 dBm (337 W)
Ideal
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P1dB = 54.35 dBm (272 W)
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Actual
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V_DD = 28 Vdc, I_DQ = 1400 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 1930 MHz
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29 30 31 32 33 34 35 36 37 38 39
P_in, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P1dB
5.72 - j5.51
1.30 - j0.69
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V @ 1930 MHz
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Ideal
P3dB = 55.25 dBm (335 W)
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P1dB = 54.29 dBm (269 W)
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Actual
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53
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51
V_DD = 28 Vdc, I_DQ = 1400 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 1990 MHz
50
29 30 31 32 33 34 35 36 37 38 39
P_in, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P1dB
6.20 + j1.19
1.09 - j046
Figure 14. Pulsed CW Output Power
versus Input Power @ 28 V @ 1990 MHz
MRF7S19210HR3 MRF7S19210HSR3
10
RF Device Data
Freescale Semiconductor