MRF7S19120NR1 Datasheet, PDF (9/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

f = 2040 MHz
Z_o = 5 Ω
Z_load
f = 1880 MHz
f = 2040 MHz
Z_source
f = 1880 MHz
V_DD = 28 Vdc, I_DQ = 1200 mA, P_out = 36 W Avg.
f
MHz
Z_source
W
Z_load
W
1880
2.388 - j3.365
2.091 - j0.905
1900
2.337 - j3.215
2.012 - j0.712
1920
2.278 - j3.070
1.957 - j0.515
1940
2.229 - j2.917
1.912 - j0.312
1960
2.190 - j2.743
1.887 - j0.089
1980
2.129 - j2.572
1.848 + j0.121
2000
2.079 - j2.410
1.819 + j0.327
2020
2.044 - j2.242
1.789 + j0.540
2040
2.006 - j2.088
1.761 + j0.756
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
9