MRF7S19120NR1 Datasheet, PDF (7/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
− 10
V_DD = 28 Vdc, I_DQ = 1200 mA
f1 = 1955 MHz, f2 = 1965 MHz
−20 _{Two −Tone Measurements, 10 MHz Tone Spacing}
− 30
− 40
3rd Order
−50 ^{5th Order}
7th Order
− 60
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
− 10
V_DD = 28 Vdc, P_out = 120 W (PEP), I_DQ = 1200 mA
Two −Tone Measurements
−20 _{(f1 + f2)/2 = Center Frequency of 1960 MHz}
IM3 −U
− 30
IM3 −L
IM5 −U
− 40
IM5 −L
IM7 −U
− 50
IM7 −L
− 60
1
10
100
TWO −TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
V_DD = 28 Vdc, I_DQ = 1200 mA
f = 1960 MHz, Input PAR = 7.5 dB
0
50
Ideal
45
−1
40
−1 dB = 32.46 W
−2
35
−2 dB = 43.76 W
−3
Actual ³⁰
−3 dB = 57.64 W
−4
25
20
30
40
50
60
70
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
0
V_DD = 28 Vdc, I_DQ = 1200 mA, f = 1960 MHz
−10 ^{Single −Carrier W−CDMA, PAR = 7.5 dB, ACPR @}
±5 MHz Offset in 3.84 MHz Integrated Bandwidth
− 20
Uncorrected, Upper and Lower
− 30
−40 ^{DPD Corrected}
No Memory Correction
− 50
− 60
DPD Corrected
with Memory Correction
− 70
36
38
40
42
44
46
48
50
P_out, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
19
T_C = −30_C
18
25_C
G_ps
17
85_C
16
60
− 30_C
25_C ₅₀
85_C
40
30
15
20
14
η_D
13
1
V_DD = 28 Vdc
I_DQ = 1200 mA
f = 1960 MHz
10
100
10
0
300
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
7