MRF7S19120NR1 Datasheet, PDF (6/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
18.4
36
18.3
35
G_ps
18.2
34
18.1
η_D
33
18
32
V_DD = 28 Vdc, P_out = 36 W (Avg.), I_DQ = 1200 mA
17.9
Single −Carrier W−CDMA, 3.84 MHz Channel
− 0.5
0
17.8
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) _−1
−4
17.7
PARC
− 1.5
−8
17.6
−2
− 12
17.5
IRL
− 2.5
− 16
17.4
−3
− 20
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 36 Watts Avg.
19
18 1500 mA
1200 mA
17
900 mA
16
17.6
17.4 ^ηD
17.2
45
G_ps
44
43
17
42
16.8
41
16.6
V_DD = 28 Vdc, P_out = 59 W (Avg.), I_DQ = 1200 mA
−2
0
Single −Carrier W−CDMA, 3.84 MHz Channel
16.4
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) ^−2.5
−4
16.2
PARC
16
−3
−8
− 3.5
− 12
15.8
IRL
−4
− 16
15.6
− 4.5
− 20
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 59 Watts Avg.
I_DQ = 1800 mA
− 10
V_DD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
− 20
− 30
I_DQ = 600 mA
900 mA
− 40
350 mA
15 _{600 mA}
V_DD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
14
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
1200 mA
1500 mA
− 50
− 60
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S19120NR1
6
RF Device Data
Freescale Semiconductor