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MRF7S19120NR1 Datasheet, PDF (8/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor | |||
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TYPICAL CHARACTERISTICS
19
108
IDQ = 1200 mA
18
f = 1960 MHz
17
107
16
15
106
14
28 V
VDD = 24 V
32 V
13
0
40
80
120
160
200
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
105
90
110 130
150 170
190 210
230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 36 W Avg., and ηD = 32%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcuâ
lators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
Compressed Output
0.1
Signal @ 36 W Pout
Input Signal
0.01
0.001
0.0001
WâCDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
0
2
4
6
8
10
PEAK âTOâAVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
â 10
3.84 MHz
â 20
Channel BW
â 30
â 40
â 50
â 60
â 70
â 80
â 90
âACPR in 3.84 MHz
Integrated BW
â 100
âACPR in 3.84 MHz
Integrated BW
â 110
â9 â7.2 â5.4 â3.6 â1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S19120NR1
8
RF Device Data
Freescale Semiconductor
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