MRF7S15100HR3 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
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Ideal
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P3dB = 51.63 dBm (146 W)
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P1dB = 50.95 dBm (125 W)
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Actual
50
49
48
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V_DD = 28 Vdc, I_DQ = 600 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 1500 MHz
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27 28 29 30 31 32 33 34 35 36 37
P_in, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P1dB
2.02 + j6.21
2.00 - j3.65
Figure 12. Pulsed CW Output Power
versus Input Power @ 28 V
RF Device Data
Freescale Semiconductor
MRF7S15100HR3 MRF7S15100HSR3
9