MRF7S15100HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
22
90
−18
V_DD = 28 Vdc, I_DQ = 600 mA, f = 1490 MHz
85_C
Single−Carrier W−CDMA, 3.84 MHz
25_C
20 _{Channel Bandwidth}
−30_C ⁷⁵
−25
25_C
18
G_ps
16
T_C = −30_C
85_C
25_C
60
−32
85_C
45
−39
14
30
−46
ACPR
12
η_D
10
1
15
−53
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0
−60
10
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 7. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
25
0
20
−5
S21
15
−10
10
−15
5
V_DD = 28 Vdc
−20
S11
I_DQ = 600 mA
0
−25
1150 1250 1350 1450 1550 1650 1750 1850 1950 2050 2150 2250
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W - CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
W−CDMA. ACPR Measured in 3.84 MHz
0.001 ^{Channel Bandwidth @ ±5 MHz Offset.}
Input Signal PAR = 7.5 dB @ 0.01%
0.0001 ^{Probability on CCDF}
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 9. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−10
3.84 MHz
−20
Channel BW
−30
−40
−50
−60
−70
−80
−90
−ACPR in 3.84 MHz
Integrated BW
−100
−ACPR in 3.84 MHz
Integrated BW
−110
−9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 10. Single - Carrier W - CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF7S15100HR3 MRF7S15100HSR3
7