MRF7S15100HR3 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1470 to
1510 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
• Typical Single - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ =
600 mA, P_out = 23 Watts Avg., f = 1507.5 MHz, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 19.5 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW
Output Power
• Typical P_out @ 1 dB Compression Point ' 100 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S15100H
Rev. 0, 7/2008
MRF7S15100HR3
MRF7S15100HSR3
1510 MHz, 23 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465- 06, STYLE 1
NI - 780
MRF7S1500HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S1500HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ⁽¹⁾
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ⁽²⁾
Thermal Resistance, Junction to Case
Case Temperature 80°C, 55 W CW
Case Temperature 77°C, 23 W CW
R_θJC
0.65
0.74
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S15100HR3 MRF7S15100HSR3
1