MRF7S15100HR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 10 Ω
f = 1570 MHz
Z_load
f = 1410 MHz
f = 1570 MHz
Z_source
f = 1410 MHz
V_DD = 28 Vdc, I_DQ = 600 mA, P_out = 23 W Avg.
f
MHz
Z_source
W
Z_load
W
1410
2.51 - j5.82
4.12 - j4.20
1430
2.53 - j5.58
3.95 - j4.07
1450
2.55 - j5.36
3.78 - j3.94
1470
2.58 - j5.15
3.61 - j3.80
1490
2.62 - j4.97
3.45 - j3.65
1510
2.67 - j4.81
3.30 - j3.51
1530
2.73 - j4.68
3.15 - j3.37
1550
2.79 - j4.57
3.00 - j3.22
1570
2.85 - j4.49
2.87 - j3.06
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 11. Series Equivalent Source and Load Impedance
MRF7S15100HR3 MRF7S15100HSR3
8
RF Device Data
Freescale Semiconductor