MRF6VP2600HR6_10 Datasheet, PDF (9/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

Z_source
f = 225 MHz
Z_o = 10 Ω
Z_load
f = 225 MHz
V_DD = 50 Vdc, I_DQ = 2600 mA, P_out = 125 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
225
1.42 + j8.09
4.45 + j1.16
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
--
Matching
Network
--
Z _source
+
Z _load
Figure 20. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
9