MRF6VP2600HR6_10 Datasheet, PDF (6/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

TYPICAL CHARACTERISTICS — TWO--TONE
--20
V_DD = 50 Vdc, I_DQ = 2600 mA, f1 = 222 MHz
f2 = 228 MHz, Two--Tone Measurements
--30
--10
V_DD = 50 Vdc, P_out = 500 W (PEP), I_DQ = 2600 mA
Two--Tone Measurements
--20
--40
3rd Order
--50
5th Order
--60
7th Order
--70
5
10
100
700
P_out, OUTPUT POWER (WATTS) PEP
Figure 10. Intermodulation Distortion
Products versus Output Power
--30
3rd Order
--40
5th Order
--50
7th Order
--60
0.1
1
10
40
TWO--TONE SPACING (MHz)
Figure 11. Intermodulation Distortion
Products versus Tone Spacing
26
25.5
I_DQ = 2600 mA
2300 mA
25
2000 mA
24.5
1800 mA
24
1300 mA
23.5
20
V_DD = 50 Vdc, f1 = 222 MHz, f2 = 228 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
100
700
P_out, OUTPUT POWER (WATTS) PEP
Figure 12. Two--Tone Power Gain versus
Output Power
--20
V_DD = 50 Vdc, f1 = 222 MHz, f2 = 228 MHz
--25 ^{Two--Tone Measurements, 6 MHz Tone Spacing}
--30
I_DQ = 1300 mA
--35
2600 mA
--40
1800 mA
--45
2000 mA _{2300 mA}
--50
20
100
700
P_out, OUTPUT POWER (WATTS) PEP
Figure 13. Third Order Intermodulation
Distortion versus Output Power
MRF6VP2600HR6
6
RF Device Data
Freescale Semiconductor