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MRF6VP2600HR6_10 Datasheet, PDF (14/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET | |||
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TYPICAL CHARACTERISTICS â 352.2 MHz
23
80
22 VDD = 50 Vdc
Gps
70
IDQ = 150 mA
21 f = 352.2 MHz
60
20
50
ηD
19
40
18
30
17
20
16
10
15
0
10
100
1000
Pout, OUTPUT POWER (WATTS) CW
Figure 26. CW Power Gain and Drain Efficiency
versus Output Power
MRF6VP2600HR6
14
RF Device Data
Freescale Semiconductor
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