MRF6VP2600HR6_10 Datasheet, PDF (15/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

Z_source
f = 352.2 MHz
f = 352.2 MHz
Z_load
Z_o = 10 Ω
V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 600 W CW
f
MHz
Z_source
Ω
Z_load
Ω
352.2
1.10 + j3.80
2.26 + j3.57
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
--
Matching
Network
--
Z _source
+
Z _load
Figure 27. Series Equivalent Source and Load Impedance — 352.2 MHz
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
15