MRF6V14300HR3 Datasheet, PDF (9/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
Date
Sept. 2008
Oct. 2008
Nov. 2008
Description
• Initial Release of Data Sheet
• Added footnote to describe the formula used to calculate values for Min and Typ Drain Efficiency in the
Functional Test table, p. 2
• Updated Fig. 4, Safe Operating Area, to show additional curves for 270 W and 300 W output power, p. 5
• Added Fig. 12, MTTF versus Junction Temperature, p. 6
• Changed “multiply by” symbol to “divide by” symbol in the Functional Test Drain Efficiency formula
footnote, p. 2
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
9