MRF6V14300HR3 Datasheet, PDF (6/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
400
24
T_C = −30_C
70
25_C ^−30_C
25_C
55_C
300
22
G_ps
85_C 58
85_C
T_C = −30_C
200
20 ^25_C
46
100
V_DD = 50 Vdc, I_DQ = 150 mA, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
0
0
1
2
3
4
5
6
P_in, INPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
85_C 55_C
η_D
18
34
V_DD = 50 Vdc, I_DQ = 150 mA, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
16
22
50
100
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
19
63
18
G_ps
62
17
61
16
η_D
60
15
59
14
0
13
IRL
−5
12
−10
11
−15
10
V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 330 W Peak (39.6 W Avg.)
Pulse Width = 300 μsec, Duty Cycle = 12%
−20
9
−25
1200 1225 1250 1275 1300 1325 1350 1375 1400
f, FREQUENCY (MHz)
Figure 11. Broadband Performance @ P_out = 330 Watts Peak
10⁸
10⁷
10⁶
10⁵
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 330 W Peak, Pulse Width = 300 μsec,
Duty Cycle = 12%, and η_D = 60.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
MRF6V14300HR3 MRF6V14300HSR3
6
RF Device Data
Freescale Semiconductor