MRF6V14300HR3 Datasheet, PDF (5/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
1000
C_oss
C_iss
100
Measured with ±30 mV(rms)ac @ 1 MHz
V_GS = 0 Vdc
10
C_rss
1
0.1
0
10
20
30
40
50
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain - Source Voltage
160
140
120
100
P_out = 300 W
80
P_out = 270 W
60
P_out = 330 W
40
20
V_DD = 50 Vdc, I_DQ = 150 mA
f = 1200 MHz, Pulse Width = 300 μsec
0
0 2 4 6 8 10 12 14 16 18 20
DUTY CYCLE (%)
Figure 4. Safe Operating Area
24
65
22
55
G_ps
20
45
η_D
18
35
V_DD = 50 Vdc, I_DQ = 150 mA, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
16
50
100
25
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
59
58
P3dB = 55.30 dBm (339 W)
Ideal
57 _{P1dB = 54.77 dBm (300 W)}
56
55
Actual
54
53
52
51
50
49
V_DD = 50 Vdc, I_DQ = 150 mA, f = 1400 MHz
48
Pulse Width = 300 μsec, Duty Cycle = 12%
47
27
29
31
33
35
37
39
P_in, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
22
I_DQ = 600 mA
21
20 ^{300 mA}
150 mA
19
450 mA
18
V_DD = 50 Vdc, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
17
50
100
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
22
I_DQ = 150 mA, f = 1400 MHz
21 ^{Pulse Width = 300 μsec}
Duty Cycle = 12%
20
19
18
17
45 V _{50 V}
40 V
16
35 V
V_DD = 30 V
15
50
100
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
5