MRF6S27015NR1 Datasheet, PDF (9/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 2700 MHz
Z_load
Z_o = 5 Ω
f = 2700 MHz
f = 2500 MHz
f = 2500 MHz
Z_source
V_DD = 28 Vdc, I_DQ = 160 mA, P_out = 3 W Avg.
f
MHz
Z_source
W
Z_load
W
2500
2525
2550
2575
2600
2625
2650
2675
2700
4.059 - j2.284
3.679 - j2.593
3.006 - j2.574
2.355 - j2.190
2.075 - j1.657
1.930 - j1.179
1.973 - j0.771
2.017 - j0.557
2.024 - j0.379
3.380 - j0.543
3.265 - j0.546
3.077 - j0.449
2.892 - j0.336
2.727 - j0.182
2.564 - j0.034
2.435 + j0.140
2.286 + j0.340
2.227 + j0.538
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 17. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
9