MRF6S27015NR1 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2000 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ =
160 mA, P_out = 3 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — - 45 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRF6S27015N
Rev. 0, 8/2006
MRF6S27015NR1
MRF6S27015GNR1
2300- 2700 MHz, 3 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MRF6S27015NR1
CASE 1265A - 02, STYLE 1
TO - 270- 2 GULL
PLASTIC
MRF6S27015GNR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Symbol
V_DSS
V_GS
T_stg
T_J
Symbol
Value
- 0.5, +68
- 0.5, +12
- 65 to +175
200
Value ^(1,2)
Unit
Vdc
Vdc
°C
°C
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 7.5 W Avg., Two - Tone
Case Temperature 79°C, 3 W CW
R_θJC
°C/W
2.0
2.2
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Class
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
1