MRF6S27015NR1 Datasheet, PDF (7/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
18
64
17
G_ps
16
15
14
T_C = −30_C
25_C
85_C
− 30_C
56
25_C ₄₈
85_C
40
32
13
24
η_D
12
V_DD = 28 Vdc
16
11
I_DQ = 160 mA
f = 2600 MHz
8
10
0
1
10
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
25
3
V_DD = 28 Vdc, I_DQ = 160 mA
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
20 _{7 MHz Channel Bandwidth, f = 2600 MHz}
2.5
15
2
10
1.5
η_D
5
EVM
1
0
0.5
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
P_out, OUTPUT POWER (dBm)
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
15
I_DQ = 160 mA
f = 2600 MHz
14
13
12
11
V_DD = 24 V
28 V ^{32 V}
10
5
10
15
20
25
30
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁹
10⁸
10⁷
10⁶
10⁵
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
7