MRF6S27015NR1 Datasheet, PDF (2/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
I_DSS
—
I_GSS
—
—
10
μAdc
—
1
μAdc
—
500
nAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 40 μAdc)
Gate Quiescent Voltage ⁽¹⁾
(V_DS = 28 Vdc, I_D = 160 mAdc, Measured in Functional Test)
V_GS(th)
1.5
2.2
3.5
Vdc
V_GS(Q)
2
2.8
3.5
Vdc
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 0.4 Adc)
V_DS(on)
—
0.4
0.33
Vdc
Dynamic Characteristics ⁽²⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
11.6
—
pF
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
0.02
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 160 mA, P_out = 3 W Avg., f = 2600 MHz, Single - Carrier
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
G_ps
12.5
14
16
dB
Drain Efficiency
η_D
19
22
—
%
Adjacent Channel Power Ratio
ACPR
—
- 45
- 42
dBc
Input Return Loss
IRL
—
- 18
-9
dB
1. V_GG = 11/10 x V_GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally input matched.
MRF6S27015NR1 MRF6S27015GNR1
2
RF Device Data
Freescale Semiconductor