MRF6S18140HR3_09 Datasheet, PDF(9/12 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MRF6S18140HR3_09 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

◁

f = 1920 MHz

Zload

f = 1760 MHz

Zo = 10 Î©

f = 1920 MHz

Zsource

f = 1760 MHz

VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg.

MHz

Zsource

Zload

1760

1.454 - j6.703

1.344 - j2.479

1780

1.465 - j6.511

1.338 - j2.299

1800

1.467 - j6.336

1.333 - j2.129

1820

1.448 - j6.193

1.325 - j1.966

1840

1.440 - j6.049

1.308 - j1.801

1860

1.414 - j5.938

1.301 - j1.687

1880

1.377 - j5.827

1.303 - j1.550

1900

1.311 - j5.710

1.301 - j1.419

1920

1.231 - j5.583

1.289 - j1.303

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

RF Device Data

Freescale Semiconductor

Z source

Z load

Figure 16. Series Equivalent Source and Load Impedance

MRF6S18140HR3 MRF6S18140HSR3

▷