MRF6S18140HR3_09 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16.8
30
16.6
η_D
29
16.4
28
16.2
16
G_{ps VDD = 28 Vdc, Pout = 29 W (Avg.)}
I_DQ = 1200 mA, 2-Carrier N-CDMA
15.8
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
15.6
@ 0.01% Probability (CCDF)
27
26
-24
0
-30
-4
15.4
15.2
15
ACPR
14.8
IM3
IRL
-36
-8
-42
-12
-48
-16
-54
-20
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ P_out = 29 Watts Avg.
16.4
42
16.2
η_D
41
16
40
15.8
15.6
G_ps ^VDD ^{= 28 Vdc, P}out ^{= 60 W (Avg.)}
I_DQ = 1200 mA, 2-Carrier N-CDMA
15.4
2.5 MHz Carrier Spacing, 1.2288 MHz
15.2
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
15
39
38
-12
0
-18
-4
-24
-8
14.8
IM3
IRL
14.6
ACPR
14.4
-30
-12
-36
-16
-42
-20
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ P_out = 60 Watts Avg.
19
I_DQ = 1800 mA
18
17 ^{1500 mA}
1200 mA
16
900 mA
15
14 ^{600 mA}
13
1
V_DD = 28 Vdc
f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
-1 0
V_DD = 28 Vdc
f1 = 1838.75 MHz, f2 = 1841.25 MHz
-2 0 _{Two-Tone Measurements, 2.5 MHz Tone Spacing}
-3 0
I_DQ = 600 mA
-4 0
1800 mA
-5 0
900 mA
1500 mA
1200 mA
-60
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
5