MRF6S18140HR3_09 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

18
17 Gps
16
15
T_C = -30_C
25_C
85_C
TYPICAL CHARACTERISTICS
66
17
-30 _C
25_C
85_C ₅₅
16
44
33
15
I_DQ = 1200 mA
f = 1840 MHz
14
22
13
η_D
12
1
10
V_DD = 28 Vdc
I_DQ = 1200 mA
f = 1840 MHz
100
11
0
400
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
14
V_DD = 24 V
28 V
32 V
13
0
100
200
260
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁸
10⁷
10⁶
10⁵
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 29 W Avg., and η_D = 27.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
7