MRF6S18140HR3_09 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
-10
V_DD = 28 Vdc, I_DQ = 1200 mA
-20 f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two-Tone Measurements
-30
3rd Order
-40
-50
-60
7th Order
5th Order
-70
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 140 W (PEP), I_DQ = 1200 mA
-1 0 Two-Tone Measurements,
(f1 + f2)/2 = Center Frequency of 1840 MHz
-2 0
-3 0
IM3-U
-4 0
IM5-U ^IM3-L
IM5-L
-5 0
IM7-L
-6 0
1
IM7-U
10
100
TWO-T ONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
60
Ideal
59
P6dB = 53.90 dBm (245.47 W)
58
57 _{P3dB = 53.36 dBm (216.77 W)}
56
55 _{P1dB = 52.6 dBm (182.64 W)}
54
53
Actual
52
51
V_DD = 28 Vdc, I_DQ = 1200 mA
50
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 1840 MHz
49
32 33 34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
50
45
V_DD = 28 Vdc, I_DQ = 1200 mA
f1 = 1838.75 MHz, f2 = 1841.25 MHz
40 2-Carrier N-CDMA, 2.5 MHz Carrier
35 ^{Spacing, 1.2288 MHz Channel}
Bandwidth, PAR = 9.8 dB
30 _{@ 0.01% Probability (CCDF)}
IM3
-30 _C
-20
25_C
-25
-30
85_C
-35
-40
25
-45
20
15 _{TC = -30_C}
10
η_D
5
G_ps
ACPR
-50
-55
85_C
25_C ^-60
-65
0
-70
1
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 10. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
MRF6S18140HR3 MRF6S18140HSR3
6
RF Device Data
Freescale Semiconductor