MRF5S9150HR3 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 910 MHz
Z_load
f = 850 MHz
Z_o = 5 Ω
Z_source
f = 850 MHz
f = 910 MHz
V_DD = 28 Vdc, I_DQ = 1500 mA, P_out = 33 W Avg.
f
MHz
Z_source
W
Z_load
W
850
3.61 - j2.30
1.12 + j0.09
865
2.85 - j2.54
1.24 + j0.22
880
2.13 - j2.47
1.31 + j0.36
895
1.53 - j2.27
1.46 + j0.48
910
1.02 - j1.90
1.61 + j0.53
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF5S9150HR3 MRF5S9150HSR3
9