MRF5S9150HR3 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
500
nAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 600 μAdc)
V_GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1500 mAdc, Measured in Functional Test)
V_GS(Q)
3
4
5
Vdc
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 3.15 Adc)
V_DS(on)
0.1
0.2
0.3
Vdc
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
3.1
—
pF
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
91.5
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1500 mA, P_out = 33 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
18.5
19.7
21.5
dB
Drain Efficiency
η_D
26.5
28.4
—
%
Adjacent Channel Power Ratio
ACPR
—
- 46.8
- 45
dBc
Input Return Loss
IRL
—
- 20
-9
dB
1. Part internally input matched.
MRF5S9150HR3 MRF5S9150HSR3
2
RF Device Data
Freescale Semiconductor