MRF5S9150HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
20
32
19.6
G_ps
30
η_D
19.2
28
18.8
26
V_DD = 28 Vdc, P_out = 33 W (Avg.)
18.4
I_DQ = 1500 mA, N−CDMA IS−95
24
18
(Pilot, Sync, Paging, Traffic Codes
−40
−3
8 Through 13)
17.6
−45
−8
17.2
ACPR
16.8
−50
−13
IRL
−55
−18
16.4 _ALT1
−60
−23
16
−65
−28
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ P_out = 33 Watts Avg.
19.5
43
19
η_D
41
18.5
18
17.5
17
16.5
16 ^ACPR
15.5
G_ps
V_DD = 28 Vdc, P_out = 66 W (Avg.)
I_DQ = 1500 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
IRL
39
37
35
−35
−3
−40
−8
−45
−13
−50
−18
15 _ALT1
−55
−23
14.5
−60
−28
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ P_out = 66 Watts Avg.
22
21 ^{IDQ = 2250 mA}
1875 mA
20
1500 mA
19
1125 mA
18
17 ^{750 mA}
16
1
V_DD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc
−20
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−30
I_DQ = 750 mA
−40
2250 mA
−50
1875 mA
1500 mA
−60
1125 mA
−70
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S9150HR3 MRF5S9150HSR3
5